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Si4561DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
II D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
- 40
44
- 41
- 5.5
4.3
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
N-Ch
P-Ch
N-Ch
P-Ch
1.4
- 1.4
3.0
- 3.0
100
- 100
V
nA
V DS = 40 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
10
μA
V DS = - 40 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V DS = - 5 V, V GS = - 10 V
V GS = 10 V, I D = 5 A
N-Ch
P-Ch
N-Ch
10
- 10
0.0295
0.0355
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 10 V, I D = - 5 A
V GS = 4.5 V, I D = 4 A
P-Ch
N-Ch
0.0285
0.0355
0.035
0.0425
Ω
V GS = - 4.5 V, I D = - 4 A
P-Ch
0.037
0.047
Forward Transconductance b
g fs
V DS = 15 V, I D = 5 A
V DS = - 15 V, I D = - 5 A
N-Ch
P-Ch
22
20
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
N-Channel
V DS = 20 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 20 V, V GS = 0 V, f = 1 MHz
V DS = 20 V, V GS = 10 V, I D = 5 A
V DS = - 20 V, V GS = - 10 V, I D = - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
640
1555
73
176
41
142
11.7
38.5
5.3
20
60
9
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
N-Channel
V DS = 20 V, V GS = 4.5 V I D = 5 A
P-Channel
V DS = - 20 V, V GS = - 4.5 V, I D = - 5 A
f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
17
1.9
4.2
1.7
7.0
2.2
3
27
nC
Ω
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Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
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